On a discussion of materials/semiconductor material previously known thatsemiconductor material is divided into two, namely semiconductors and semiconductor of extrinsic. Before continuing your reading activities, help us toclick the image on the side. In extrinsic semiconductors semiconductor materialin particular are also grouped into two parts, namely a type P and N type.

In the previous article that discusses about the P-type and N-type have been described that discussion of semiconductor division into type P and N typebased on atom doping given to atoms of semiconductors. The grant aims to increase the energy of the gep, owned by semiconductor material which we willcreate. The addition of the aggregate/other elements on semiconductormaterials of membut we can recognize such extrinsic materials semikondutor, whether the type N or type P.

On pembahsan about the charge On the semiconductor Type N and type P it will membahs on how the charges contained in the semiconductor material typeP and N type.

As already discussed, in the semiconductor type n, conduction current isassociated with an excess of electrons, whereas in p type semiconductorconduction was related to the hole. Readers thought that the type n had a netnegative charge and on a white garment type p charge positive. But theconclusion is wrong. It is true that in the n-type semiconductor has an excess ofelectrons, but an excess of electrons is given by impurities donor atoms areelectrically neutral Atomic each. 
When the atoms of the impurities are added,the term ' electron ' refers to an excess of excess with respect to the number of electrons necessary to meet the covalent bonds in semiconductor crystals.Excess electrons it is free electrons and raise semiconductor conductivity. The circumstances with regard to p-type semiconductor is the same. It can be concluded that n-type semiconductor as good with p type semiconductor that iselectrically neutral.

Majority and minority carriers
As has been discussed in the berkanaan with the effect of the impurities, the type n had a large number of free electrons, while the material type p has a large number of holes. But it must be remembered that at room temperature, some of the covalent bond is broken, the next in the same number of freedelectrons and holes. On the type n had a hole-electron pair part (generatedbecause of defective bonding at room temperature) but other than that have a large number of free electrons with regard to the effect of the impurities. Theseimpurities cause free electrons are not associated with the pit. As a result, the material type n had a large number of free electrons and a number of smallholes. Free electron in this well thought out as the carrier's majority — becauselarge sections of the current in the n-type material is due to the flow of electrons and holes is non-minority carriers. Analogy for material type p, the number of the hole exceeds the free electrons. Therefore the hole is the bearer of the majority and minority carriers is a free electron. Note the illustrations in the following figure.

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